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1

GaN single nanowire p-i-n diode for high temperature operations

Zou, Xinbo, Zhang, Xu, Zhang, Yu, Lyu, Qifeng, Tang, Chak Wah, Lau, Kei May

Journal:

ACS Applied Electronic Materials

Year:

2020

File:

PDF, 3.78 MB

2020

2

Metamorphic Heterostructure InP/GaAsSb/InP HBTs on GaAs Substrates by MOCVD

Wei Zhou,, Chak Wah Tang,, Jia Zhu,, Kei May Lau,, Zeng, Y., Liu, H.G., Tao, N.G., Bolognesi, C.R.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 375 KB

english, 2007

3

Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN

Kim, Han-Ki, Seong, Tae-Yeon, Adesida, Ilesanmi, Tang, Chak Wah, Lau, Kei May

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 308 KB

english, 2004

4

InAlGaAs/InAlAs MQWs on Si Substrate

Shi, Bei, Li, Qiang, Wan, Yating, Ng, Kar Wei, Zou, Xinbo, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Photonics Technology Letters

Year:

2015

Language:

english

File:

PDF, 689 KB

english, 2015

5

Switching performance of quasi-vertical GaN-based p-i-n diodes on Si

Zhang, Xu, Zou, Xinbo, Tang, Chak Wah, Lau, Kei May

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 1.00 MB

english, 2017

6

[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Experimental characterization of the fully integrated Si-GaN cascoded FET

Ren, Jie, Tang, Chak Wah, Feng, Hao, Jiang, Huaxing, Yang, Wentao, Zhou, Xianda, Lau, Kei May, Sin, Johnny K. O.

Year:

2018

Language:

english

File:

PDF, 1.02 MB

english, 2018

7

Active matrix monolithic microâLED fullâcolor microâdisplay

Zhang, Xu, Qi, Longheng, Chong, Wing Cheung, Li, Peian, Tang, Chak Wah, Lau, Kei May

Journal:

Journal of the Society for Information Display

Year:

2020

File:

PDF, 37.35 MB

2020

8

Dimensional structure of the BRIEF2 and its relations with ADHD symptoms and task performance on executive functions in Chinese children

Shum, Kathy Kar-Man, Zheng, Que, Chak, Guinevere Sophia, Kei, Kathy Tsam-Ling, Lam, Cecilia Wing-Chi, Lam, Iris Kit-Yee, Lok, Cythia Sin Wah, Tang, Jacqueline Wai-Yan

Journal:

Child Neuropsychology

Year:

2020

File:

PDF, 890 KB

2020

9

Antipsychotics and risk of cerebrovascular events in treatment of behavioural and psychological symptoms of dementia in Hong Kong: a hospital-based, retrospective, cohort study

Man-chak Chan, Catherine Shiu-yin Chong, Anna Ying-king Wu, Kai-choi Wong, Eva Lai-wah Dunn, Orlando Wai-nang Tang, Wah-fat Chan

Journal:

International Journal of Geriatric Psychiatry

Year:

2010

Language:

english

File:

PDF, 152 KB

english, 2010

10

Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3interfacial layer in metalorganic chemical vapor deposition

Yugang Zhou, Deliang Wang, Rongming Chu, Chak-Wah Tang, Yundong Qi, Zhengdong Lu, Kevin J. Chen, Kei May Lau

Journal:

Journal of Electronic Materials

Year:

2005

Language:

english

File:

PDF, 272 KB

english, 2005

11

In0.53Ga0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD

Xiuju Zhou, Chak Wah Tang, Qiang Li, Kei May Lau

Journal:

physica status solidi (a)

Year:

2012

Language:

english

File:

PDF, 678 KB

english, 2012

12

Monolithic LED Microdisplay on Active Matrix Substrate Using Flip-Chip Technology

Zhao Jun Liu, Ka Ming Wong, Chi Wing Keung, Chak Wah Tang, Kei May Lau

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

2009

Language:

english

File:

PDF, 637 KB

english, 2009

13

Fabrication of 100-nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD

Ming Li, Haiou Li, Chak Wah Tang, Kei May Lau

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 406 KB

english, 2012

14

30-nm Inverted $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain

Zhou, Xiuju, Li, Qiang, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 471 KB

english, 2012

15

Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Li, Haiou, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 353 KB

english, 2008

16

Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Li, Haiou, Feng, Zhihong, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 200 KB

english, 2011

17

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - AlInAs/GaInAs mHEMTs on silicon substrates grown By MOCVD

Lau, Kei May, Tang, Chak Wah, Li, Haiou, Zhong, Zhenyu

Year:

2008

Language:

english

File:

PDF, 1.75 MB

english, 2008

18

High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

Cai, Yong, Cheng, Zhiqun, Yang, Zhenchuan, Tang, Chak Wah, Lau, Kei May, Chen, Kevin J.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 312 KB

english, 2007

19

Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

Li, Hai-Ou, Huang, Wei, Tang, Chak Wah, Deng, Xiao-Fang, Lau, Kei May

Journal:

Chinese Physics B

Year:

2011

Language:

english

File:

PDF, 819 KB

english, 2011

20

Enhancement-mode Lg=50nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with fmax surpassing 408GHz

Li, Ming, Tang, Chak Wah, Li, Haiou, Lau, Kei May

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 889 KB

english, 2014

21

Material and Device Characteristics of Metamorphic ${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ MOSHEMTs Grown on GaAs and Si Substrates by MOCVD

Li, Qiang, Zhou, Xiuju, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.53 MB

english, 2013

22

Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays

Li, Qiang, Ng, Kar Wei, Tang, Chak Wah, Lau, Kei May, Hill, Richard, Vert, Alexey

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 1.96 MB

english, 2014

23

[IEEE 2014 26th International Conference on Indium Phosphide and Related Materials (IPRM) - Montpellier Cedex, France (2014.5.11-2014.5.15)] 26th International Conference on Indium Phosphide and Related Materials (IPRM) - Growth of low defect-density InP on exact Si (001) substrates by metalorganic chemical vapor deposition with position-controlled seed arrays

Li, Qiang, Tang, Chak Wah, Lau, Kei May, Hill, Richard, Vert, Alexey

Year:

2014

Language:

english

File:

PDF, 309 KB

english, 2014

24

High-Performance Inverted $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD

Li, Qiang, Zhou, Xiuju, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 585 KB

english, 2012

25

Efficacy of Mycophenolate Mofetil in Patients with Diffuse Proliferative Lupus Nephritis

Chan, Tak Mao, Li, Fu Keung, Tang, Colin S.O., Wong, Raymond W.S., Fang, Guo Xiang, Ji, Yu Lian, Lau, Chak Sing, Wong, Andrew K.M., Tong, Matthew K.L., Chan, Kwok Wah, Lai, Kar Neng

Journal:

Boston Medical and Surgical Journal

Year:

2000

Language:

english

File:

PDF, 110 KB

english, 2000

26

[IEEE 2009 14th OptoElectronics and Communications Conference (OECC) - Hong Kong, China (2009.07.13-2009.07.17)] 2009 14th OptoElectronics and Communications Conference - GaN-based monolithic LED micro-arrays

Zhao Jun Liu,, Ka Ming Wong,, Chak Wah Tang,, Lau, Kei May

Year:

2009

Language:

english

File:

PDF, 189 KB

english, 2009

27

[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - 30nm enhancement-mode In0.53Ga0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance

Zhou, Xiuju, Li, Qiang, Tang, Chak Wah, Lau, Kei May

Year:

2012

Language:

english

File:

PDF, 1.94 MB

english, 2012

28

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits

Yong Cai,, Zhiqun Cheng,, Wilson Chak,, Wah Tang,, Chen, K.J., Kei May Lau,

Year:

2005

Language:

english

File:

PDF, 691 KB

english, 2005

29

Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon

Chen, Peng, Chen, Winnie V., Yu, Paul K. L., Tang, Chak Wah, Lau, Kei May, Mawst, Luke, Paulson, Charles, Kuech, T. F., Lau, S. S.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 402 KB

english, 2009

30

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - 0.3-µm gate-length metamorphic AlInAs/GaInAs HEMTs on Silicon substrates by MOCVD

Li, Hai-Ou, Li, Ming, Tang, Chak Wah, Zhong, Zhen Yu, Lau, Kei May

Year:

2010

Language:

english

File:

PDF, 354 KB

english, 2010

31

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - High-performance implant-free InGaAs MOSFETs on GaAs substrate grown by MOCVD

Zhou, Xiuju, Tang, Chak Wah, Li, Haiou, Chen, Peng, Lau, Kei May

Year:

2010

Language:

english

File:

PDF, 363 KB

english, 2010

32

Growth of ultra-high mobility In 0.52 Al 0.48 As/In x Ga 1− x As ( x ≥ 53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition

Li, Qiang, Tang, Chak Wah, Lau, Kei May

Journal:

Applied Physics Express

Year:

2014

Language:

english

File:

PDF, 1.25 MB

english, 2014

33

Inverted-Type InGaAs Metal–Oxide–Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm

Zhou, Xiuju, Li, Qiang, Tang, Chak Wah, Lau, Kei May

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 1.66 MB

english, 2012

34

L g = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n + -GaN layer by MOCVD

Huang, Jie, Li, Ming, Tang, Chak-Wah, Lau, Kei-May

Journal:

Chinese Physics B

Year:

2014

Language:

english

File:

PDF, 1.97 MB

english, 2014

35

Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding

Zou, Xinbo, Zhang, Xu, Chong, Wing Cheung, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 3.95 MB

english, 2016

36

Fully-vertical GaN-based p-i-n Diodes on Si

Zou, Xinbo, Zhang, Xu, Lu, Xing, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 656 KB

english, 2016

37

Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates

Zou, Xinbo, Zhang, Xu, Lu, Xing, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.13 MB

english, 2016

38

Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison

Zhang, Xu, Zou, Xinbo, Lu, Xing, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.82 MB

english, 2017

39

A Novel Si–GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode

Ren, Jie, Liu, Chao, Tang, Chak Wah, Lau, Kei May, Sin, Johnny K. O.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 961 KB

english, 2017

40

SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Jiang, Huaxing, Liu, Chao, Chen, Yuying, Lu, Xing, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.34 MB

english, 2017

41

1.55 μ m room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi, Bei, Zhu, Si, Li, Qiang, Tang, Chak Wah, Wan, Yating, Hu, Evelyn L., Lau, Kei May

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 1.38 MB

english, 2017

42

[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Switching characteristics of monolithically integrated Si-GaN cascoded rectifiers

Ren, Jie, Liu, Chao, Tang, Chak Wah, Lau, Kei May, Sin, Johnny K. O.

Year:

2017

File:

PDF, 937 KB

2017

43

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] - Hetero-Epitaxy of III-V Compounds by MOCVD on Silicon Substrates

Tang, Chak Wah, Zhong, Zhenyu, Lau, Kei May

Year:

2010

Language:

english

File:

PDF, 588 KB

english, 2010

44

Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

Hu, Yaoqiao, Yip, Pak San, Tang, Chak Wah, Lau, Kei May, Li, Qiang

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 2.11 MB

english, 2018

45

A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor

Ren, Jie, Tang, Chak Wah, Feng, Hao, Jiang, Huaxing, Yang, Wentao, Zhou, Xianda, Lau, Kei May, Sin, Johnny K. O.

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 682 KB

english, 2018

46

Enhancement-Mode GaN MOS-HEMTs With Recess-Free Barrier Engineering and High- ${k}$ ZrO2 Gate Dielectric

Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 985 KB

english, 2018

47

High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO₂ Gate Dielectric

Jiang, Huaxing, Liu, Chao, Ng, Kar Wei, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.93 MB

english, 2018

48

Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time

Li, Yangfeng, Jin, Zijing, Han, Yu, Zhao, Chunyu, Huang, Jie, Tang, Chak Wah, Wang, Jiannong, Lau, Kei May

Journal:

Materials Research Express

Year:

2019

File:

PDF, 2.15 MB

2019

49

Comparison of the AlN and GaN crystalline quality on 2-inch silicon substrate via two growth methods

Li, Yangfeng, Tang, Chak Wah, Lau, Kei May

Journal:

Journal of Crystal Growth

Year:

2020

File:

PDF, 1.57 MB

2020

50

Exploring the limit of using a deep neural network on pileup data for germline variant calling

Luo, Ruibang, Wong, Chak-Lim, Wong, Yat-Sing, Tang, Chi-Ian, Liu, Chi-Man, Leung, Chi-Ming, Lam, Tak-Wah

Journal:

Nature Machine Intelligence

Year:

2020

File:

PDF, 1.55 MB

2020